Samsung is betting that the next AI performance jump will come as much from memory as from processors.
At FMS 2026 in Santa Clara, the company showed off several new technologies, including zHBM, zNAND-O, and V10 BV-NAND, aimed at AI servers, edge devices, and large data centers.
The most eye-catching is zHBM. Instead of sitting beside an AI accelerator, the memory is stacked above it using 3D packaging. Samsung says the shorter connection could improve bandwidth, reduce power consumption, and help with heat.
For edge AI, zNAND-O is designed for fast, low-latency storage in applications such as robotics and autonomous systems.
Samsung also unveiled V10 BV-NAND, which uses more than 400 layers and wafer bonding. The company says it delivers about 58% higher density than the previous generation.
The wider roadmap includes HBM4E, HBM5, and LPDDR5X-PIM.
